![]() For a silicon detector, ~3.8 eV is used to generate each electron-hole pair (~2.9 eV for Ge). The size of the signal is proportional to the energy of the incoming X-ray.A high bias voltage is applied across the crystal and this causes electrons and holes to move to electrodes on opposite sides of the crystal, producing a charge signal which is passed to the pulse processor.The energy of the incoming X-ray is dissipated by the creation of a series of electron-hole pairs in the semiconductor crystal.Older windows were composed of Be which did not allow low-energy X-rays (< ~0.9 keV) to pass through it, but more modern windows are composed of polymers that will allow low-energy X-rays (down to ~0.1 keV) to pass.Įlectronics to detect the charge recorded by the detector, convert it to a voltage pulse and pass it to the pulse processor. A window to isolate the detector crystal, under high vacuum, from the chamber of the microscope.
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